Deep electron trapping centers in Te-doped (AlxGa1-x)(0.5)In0.5P (x=0.5) layers grown by metal-organic chemical vapor deposition
| dc.citation.epage | 3672 | en_US |
| dc.citation.issue | 6A | en_US |
| dc.citation.spage | 3671 | en_US |
| dc.citation.volume | 41 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Sung, WJ | en_US |
| dc.contributor.author | Huang, KF | en_US |
| dc.contributor.author | Tseng, TY | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:42:22Z | |
| dc.date.available | 2014-12-08T15:42:22Z | |
| dc.date.issued | 2002-06-01 | en_US |
| dc.description.abstract | The properties of deep electron trapping centers of Te-doped (AlxGa1-x)(0.5)In0.5P (x = 0.5) layers grown by metal-organic chemical vapor deposition (MOCVD) are studied by using deep level transient spectroscopy (DLTS) technique. One distinct deep electron trap located at 0.165 +/- 0.01 eV is observed and found to increase as elevating Te-dopant concentration in (AlxGa1-x)(0.5)In0.5P (,v = 0.5) materials, indicating that this deep electron trap is a donor-related defect and has the similar characters as deep levels observed in Si- and Se-doped (AlxGa1-x)(0.5)In0.5P. | en_US |
| dc.identifier.doi | 10.1143/JJAP.41.3671 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.41.3671 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/28771 | |
| dc.identifier.wosnumber | WOS:000177169500011 | |
| dc.language.iso | en_US | en_US |
| dc.subject | AlGaInP | en_US |
| dc.subject | Te | en_US |
| dc.subject | defect | en_US |
| dc.subject | deep level | en_US |
| dc.subject | donor-related defect | en_US |
| dc.subject | DLTS | en_US |
| dc.title | Deep electron trapping centers in Te-doped (AlxGa1-x)(0.5)In0.5P (x=0.5) layers grown by metal-organic chemical vapor deposition | en_US |
| dc.type | Article | en_US |