Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technology (vol 6, pg G69, 2003)
| dc.citation.epage | L3 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | L3 | en_US |
| dc.citation.volume | 6 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Chang, TC | en_US |
| dc.contributor.author | Tsai, TM | en_US |
| dc.contributor.author | Liu, PT | en_US |
| dc.contributor.author | Mor, YS | en_US |
| dc.contributor.author | Chen, CW | en_US |
| dc.contributor.author | Sheu, JT | en_US |
| dc.contributor.author | Tseng, TY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:40:42Z | |
| dc.date.available | 2014-12-08T15:40:42Z | |
| dc.date.issued | 2003-07-01 | en_US |
| dc.identifier.doi | 10.1149/1.1576571 | en_US |
| dc.identifier.issn | 1099-0062 | en_US |
| dc.identifier.journal | ELECTROCHEMICAL AND SOLID STATE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.1576571 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27766 | |
| dc.identifier.wosnumber | WOS:000183151000017 | |
| dc.language.iso | en_US | en_US |
| dc.title | Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technology (vol 6, pg G69, 2003) | en_US |
| dc.type | Correction | en_US |