Structural properties of Al-rich AlInN grown on c-plane GaN substrate by metal-organic chemical vapor deposition
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Lin, Pei-Yin | en_US |
| dc.contributor.author | Chen, Jr-Yu | en_US |
| dc.contributor.author | Shih, Yi-Sen | en_US |
| dc.contributor.author | Chang, Li | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2015-07-21T11:20:34Z | |
| dc.date.available | 2015-07-21T11:20:34Z | |
| dc.date.issued | 2014-11-23 | en_US |
| dc.description.abstract | The attractive prospect for AlInN/GaN-based devices for high electron mobility transistors with advanced structure relies on high-quality AlInN epilayer. In this work, we demonstrate the growth of high-quality Al-rich AlInN films deposited on c-plane GaN substrate by metal-organic chemical vapor deposition. X-ray diffraction, scanning electron microscopy, and scanning transmission electron microscopy show that the films lattice-matched with GaN can have a very smooth surface with good crystallinity and uniform distribution of Al and In in AlInN. | en_US |
| dc.identifier.doi | 10.1186/1556-276X-9-628 | en_US |
| dc.identifier.issn | 1556-276X | en_US |
| dc.identifier.journal | NANOSCALE RESEARCH LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1186/1556-276X-9-628 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/124123 | |
| dc.identifier.wosnumber | WOS:000345970500001 | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | Metal-organic chemical vapor deposition | en_US |
| dc.subject | Epitaxy | en_US |
| dc.subject | AlInN | en_US |
| dc.subject | GaN | en_US |
| dc.title | Structural properties of Al-rich AlInN grown on c-plane GaN substrate by metal-organic chemical vapor deposition | en_US |
| dc.type | Article | en_US |