Ka-band 0.18 mu m CMOS low noise amplifier with 5.2 dB noise figure
| dc.citation.epage | 1189 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 1187 | en_US |
| dc.citation.volume | 49 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Chang, Win-Ming | en_US |
| dc.contributor.author | Hsiung, Zi-Hao | en_US |
| dc.contributor.author | Jou, Christina F. | en_US |
| dc.contributor.department | 電信工程研究所 | zh_TW |
| dc.contributor.department | Institute of Communications Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:14:11Z | |
| dc.date.available | 2014-12-08T15:14:11Z | |
| dc.date.issued | 2007-05-01 | en_US |
| dc.description.abstract | A Ka-band low noise amplifier (LNA) using three cascaded stages was designed and implemented in a standard 0.18 Pun CMOS technology. The fabricated Ka-band LNA achieves power gain (S21) above 12 dB from 30 to 32 GHz and a minimal noise figure of 5.2 dB at 31.5 GHz. The three cascaded stages LNA consume 15.58 mA from I V power supply. Compared with the recent published literatures, this LNA operates at the highest frequency ever reported by standard bulk 0.18 mu m CMOS process. (c) 2007 Wiley Periodicals, Inc. | en_US |
| dc.identifier.doi | 10.1002/mop.22383 | en_US |
| dc.identifier.issn | 0895-2477 | en_US |
| dc.identifier.journal | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1002/mop.22383 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/10861 | |
| dc.identifier.wosnumber | WOS:000245815200062 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Ka-band | en_US |
| dc.subject | LNA | en_US |
| dc.subject | CMOS | en_US |
| dc.title | Ka-band 0.18 mu m CMOS low noise amplifier with 5.2 dB noise figure | en_US |
| dc.type | Article | en_US |