An organic p-type dopant with high thermal stability for an organic semiconductor
| dc.citation.epage | 119 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 117 | en_US |
| dc.citation.woscount | 30 | |
| dc.contributor.author | Gao, Zhi Qiang | en_US |
| dc.contributor.author | Mi, Bao Xiu | en_US |
| dc.contributor.author | Xu, Gui Zhen | en_US |
| dc.contributor.author | Wan, Yi Qian | en_US |
| dc.contributor.author | Gong, Meng Lian | en_US |
| dc.contributor.author | Cheah, Kok Wai | en_US |
| dc.contributor.author | Chen, Chin H. | en_US |
| dc.contributor.department | 顯示科技研究所 | zh_TW |
| dc.contributor.department | Institute of Display | en_US |
| dc.date.accessioned | 2014-12-08T15:12:53Z | |
| dc.date.available | 2014-12-08T15:12:53Z | |
| dc.date.issued | 2008 | en_US |
| dc.description.abstract | To overcome the thermal instability of a p-doped organic hole transporting layer using the state-of-the-art p-type dopant, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane, a potent electron accepter, 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, has been found to possess superior thermal stability and proved to be an excellent p-type dopant. | en_US |
| dc.identifier.doi | 10.1039/b713566a | en_US |
| dc.identifier.issn | 1359-7345 | en_US |
| dc.identifier.journal | CHEMICAL COMMUNICATIONS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1039/b713566a | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9938 | |
| dc.identifier.wosnumber | WOS:000251633000027 | |
| dc.language.iso | en_US | en_US |
| dc.title | An organic p-type dopant with high thermal stability for an organic semiconductor | en_US |
| dc.type | Article | en_US |