AuBe Ohmic contacts to p-type ZnTe
| dc.citation.epage | 2435 | en_US |
| dc.citation.issue | 25 | en_US |
| dc.citation.spage | 2434 | en_US |
| dc.citation.volume | 34 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Lan, WH | en_US |
| dc.contributor.author | Lin, WJ | en_US |
| dc.contributor.author | Cheng, YC | en_US |
| dc.contributor.author | Tai, K | en_US |
| dc.contributor.author | Tasi, CM | en_US |
| dc.contributor.author | Wu, PH | en_US |
| dc.contributor.author | Cheng, KH | en_US |
| dc.contributor.author | Chou, ST | en_US |
| dc.contributor.author | Yang, CM | en_US |
| dc.contributor.author | Cheng, YC | en_US |
| dc.contributor.author | Huang, KF | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:47:14Z | |
| dc.date.available | 2014-12-08T15:47:14Z | |
| dc.date.issued | 1998-12-10 | en_US |
| dc.description.abstract | Ohmic contacts of AuBe to p-ZnTe show a minimum specific contact resistance of 3.0 x 10(-6) Ohm cm(2) for a p-doping level of 1.6 x 10(19) cm(-3) and at an annealing temperature of 200 degrees C. The beryllium is very effective at improving the electrical properties of p-type contacts to ZnTe. | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/31685 | |
| dc.identifier.wosnumber | WOS:000077917700053 | |
| dc.language.iso | en_US | en_US |
| dc.title | AuBe Ohmic contacts to p-type ZnTe | en_US |
| dc.type | Article | en_US |