Inverted Octagonal Surface Defects in a-Plane AlGaN/GaN Multiple Quantum Wells
| dc.citation.epage | H918 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | H915 | en_US |
| dc.citation.volume | 158 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Huang, Huei-min | en_US |
| dc.contributor.author | Chang, Chiao-yun | en_US |
| dc.contributor.author | Lu, Tien-chang | en_US |
| dc.contributor.author | Yang, Chi-chin | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:37:44Z | |
| dc.date.available | 2014-12-08T15:37:44Z | |
| dc.date.issued | 2011 | en_US |
| dc.description.abstract | The structural properties of a-plane AlGaN/GaN multiple quantum wells grown on the r-plane sapphire substrate have been characterized. The pentagonal and inverted octagonal surface pits, consisting of several non-polar and semi-polar crystalline facets, are clearly observed and distinguished. The Al incorporation efficiency of the non-polar and semi-polar facets of these special inverted octagonal surface pits has been verified in the order of (11 (2) under bar2) < (10<(12)under bar>) < (1<(1)under bar>00) approximate to (11 (2) under bar0) < (20<(2)under bar>1) by cathodoluminescence measurements at room temperature. The evolution of these inverted octagonal surface pits could be due to the results of interaction between different stacking faults. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3610990] All rights reserved. | en_US |
| dc.identifier.doi | 10.1149/1.3610990 | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.3610990 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/25946 | |
| dc.identifier.wosnumber | WOS:000293175600064 | |
| dc.language.iso | en_US | en_US |
| dc.title | Inverted Octagonal Surface Defects in a-Plane AlGaN/GaN Multiple Quantum Wells | en_US |
| dc.type | Article | en_US |