A NEW 2D ANALYTIC THRESHOLD-VOLTAGE MODEL FOR FULLY DEPLETED SHORT-CHANNEL SOI MOSFETS
| dc.citation.epage | 1661 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 1653 | en_US |
| dc.citation.volume | 40 | en_US |
| dc.citation.woscount | 26 | |
| dc.contributor.author | GUO, JY | en_US |
| dc.contributor.author | WU, CY | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:04:22Z | |
| dc.date.available | 2014-12-08T15:04:22Z | |
| dc.date.issued | 1993-09-01 | en_US |
| dc.description.abstract | The exact solution of the 2D Poisson's equation for the fully depleted SOI MOSFET's is derived by using a three-zone Green's function solution technique. Based on the derived 2D potential distribution, the front and back surface potential distributions in the Si film are analytically obtained and their accuracy are verified by 2D numerical analysis. The calculated minimum surface potential and its location are used to analyze the drain-induced barrier-lowering effect and further to develop an analytic threshold-voltage model. Comparisons between the developed analytic threshold-voltage model and the 2D numerical analysis are made. It is shown that excellent agreements are obtained for wide ranges of device structure parameters and applied biases. | en_US |
| dc.identifier.doi | 10.1109/16.231571 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/16.231571 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2868 | |
| dc.identifier.wosnumber | WOS:A1993LU39400012 | |
| dc.language.iso | en_US | en_US |
| dc.title | A NEW 2D ANALYTIC THRESHOLD-VOLTAGE MODEL FOR FULLY DEPLETED SHORT-CHANNEL SOI MOSFETS | en_US |
| dc.type | Article | en_US |