CORRELATION OF POLYSILICON THIN-FILM-TRANSISTOR CHARACTERISTICS TO DEFECT STATES VIA THERMAL ANNEALING
| dc.citation.epage | 462 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 460 | en_US |
| dc.citation.volume | 41 | en_US |
| dc.citation.woscount | 15 | |
| dc.contributor.author | CHERN, HN | en_US |
| dc.contributor.author | LEE, CL | en_US |
| dc.contributor.author | LEI, TF | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:04:05Z | |
| dc.date.available | 2014-12-08T15:04:05Z | |
| dc.date.issued | 1994-03-01 | en_US |
| dc.description.abstract | Based on the response of electrical characteristics of hydrogenated polysilicon thin-film transistors (TFT's) to post-hydrogenation thermal annealing, the relationship of device parameters to deep states and tail states are distinguished. The deep states which affect the threshold voltage and subthreshold swing recover quickly, while the tail states which influence the leakage current and field effect mobility respond to the thermal annealing only after the annealing temperature exceeds 375 degrees C for 30 min. | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2591 | |
| dc.identifier.wosnumber | WOS:A1994NF11200029 | |
| dc.language.iso | en_US | en_US |
| dc.title | CORRELATION OF POLYSILICON THIN-FILM-TRANSISTOR CHARACTERISTICS TO DEFECT STATES VIA THERMAL ANNEALING | en_US |
| dc.type | Note | en_US |