HtLaON n-MOSFETs using a low work function HfSix gate
| dc.citation.epage | 1094 | en_US |
| dc.citation.issue | 12 | en_US |
| dc.citation.spage | 1092 | en_US |
| dc.citation.volume | 28 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Cheng, C. F. | en_US |
| dc.contributor.author | Wu, C. H. | en_US |
| dc.contributor.author | Su, N. C. | en_US |
| dc.contributor.author | Wang, S. J. | en_US |
| dc.contributor.author | McAlister, S. P. | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:13:02Z | |
| dc.date.available | 2014-12-08T15:13:02Z | |
| dc.date.issued | 2007-12-01 | en_US |
| dc.description.abstract | At a 1.2-nm equivalent oxide thickness, HfSix/Hf0.7La0.3ON n-MOSFETs showed an effective work function of 4.33 eV, a low threshold voltage of 0.18 V, and a peak electron mobility of 215 cm(2)/(V center dot s). These self-aligned and gate-first HfSix/Hf0.7La0.3ON n-MOSFETs were processed using standard ion implantation and 1000-degrees C rapid thermal annealing, making them fully compatible with current very large scale integration fabrication lines. | en_US |
| dc.identifier.doi | 10.1109/LED.2007.909843 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2007.909843 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/10060 | |
| dc.identifier.wosnumber | WOS:000251429800006 | |
| dc.language.iso | en_US | en_US |
| dc.subject | HfLaON | en_US |
| dc.subject | HfSi | en_US |
| dc.subject | n-MOSFETs | en_US |
| dc.title | HtLaON n-MOSFETs using a low work function HfSix gate | en_US |
| dc.type | Article | en_US |