Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH3 and N2O nitridation
| dc.citation.epage | 2302 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | 2300 | en_US |
| dc.citation.volume | 50 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Chao, TS | en_US |
| dc.contributor.author | Chang, TH | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:40:10Z | |
| dc.date.available | 2014-12-08T15:40:10Z | |
| dc.date.issued | 2003-11-01 | en_US |
| dc.description.abstract | This brief presents a new nitridation process on floating poly-Si gate to improve the quality of both tunneling oxide and interpoly-oxide of nonvolatile memories. Three types of poly-Si for a floating gate have been investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown field, charge-to-breakdown (Q(BD)) and trapping rate. The Q(BD) of interpoly-oxide can be reached as high as 35 C/cm(2). This scheme is very promising for nonvolatile memory devices. | en_US |
| dc.identifier.doi | 10.1109/TED.2003.818819 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/TED.2003.818819 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/27437 | |
| dc.identifier.wosnumber | WOS:000186083800018 | |
| dc.language.iso | en_US | en_US |
| dc.subject | interpoly-oxide | en_US |
| dc.subject | N2O | en_US |
| dc.subject | NH3 | en_US |
| dc.subject | nitridation | en_US |
| dc.subject | nonvolatile memory | en_US |
| dc.subject | tunneling oxide | en_US |
| dc.title | Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH3 and N2O nitridation | en_US |
| dc.type | Article | en_US |