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Broadband Quantum-Dot Infrared Photodetector

dc.citation.epage965en_US
dc.citation.issue13en_US
dc.citation.spage963en_US
dc.citation.volume22en_US
dc.citation.woscount0
dc.contributor.authorLin, Wei-Hsunen_US
dc.contributor.authorTseng, Chi-Cheen_US
dc.contributor.authorChao, Kuang-Pingen_US
dc.contributor.authorKung, Shu-Yenen_US
dc.contributor.authorLin, Shih-Yenen_US
dc.contributor.authorWu, Meng-Chyien_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:06:40Z
dc.date.available2014-12-08T15:06:40Z
dc.date.issued2010-07-01en_US
dc.description.abstractIn this letter, we report the five-period quantum-dot infrared photodetectors (QDIPs) with a bi-stacked quantum-dot (QD) structure for a wide and relatively flat detection response ranging from 4 to 11 m with high responsivities. The bi-stacked QD structure consists of a standard InAs QD and an InGaAs-capped InAs QD layer separated by a 50-nm GaAs barrier layer. The device exhibits a wide detection window in the range of 4-11 mu m with high responsivities, which suggests that similar responsivities can be obtained for the standard QD and the InGaAs-capped QD layers in the mid-wavelength (MWIR) and long-wavelength (LWIR) infrared ranges, respectively. The results are advantageous for the development of broadband QDIPs covering MWIR and LWIR ranges based on the stacked QD structures.en_US
dc.identifier.doi10.1109/LPT.2010.2048425en_US
dc.identifier.issn1041-1135en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2010.2048425en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/5215
dc.identifier.wosnumberWOS:000281786200005
dc.language.isoen_USen_US
dc.subjectQuantum-dot infrared photodetectors (QDIPs)en_US
dc.titleBroadband Quantum-Dot Infrared Photodetectoren_US
dc.typeArticleen_US

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