A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics
| dc.citation.epage | 203 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 201 | en_US |
| dc.citation.volume | 31 | en_US |
| dc.citation.woscount | 15 | |
| dc.contributor.author | Su, Nai-Chao | en_US |
| dc.contributor.author | Wang, Shui Jinn | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:07:19Z | |
| dc.date.available | 2014-12-08T15:07:19Z | |
| dc.date.issued | 2010-03-01 | en_US |
| dc.description.abstract | We report an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor nonvolatile memory (NVM). This NVM shows a large 1.2-V extrapolated ten-year memory window, along with low 10-V/-12-V program/erase voltage, fast 1-ms/100-mu s speed, and good endurance. This was achieved using a charge-trap-engineered structure and high-kappa layers. | en_US |
| dc.identifier.doi | 10.1109/LED.2009.2037986 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2009.2037986 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/5776 | |
| dc.identifier.wosnumber | WOS:000274995300008 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Charge-trapping-engineered Flash (CTEF) | en_US |
| dc.subject | high-kappa | en_US |
| dc.subject | InGaZnO | en_US |
| dc.subject | metal-oxide-nitride-oxide-semiconductor (MONOS) | en_US |
| dc.subject | nonvolatile memory (NVM) | en_US |
| dc.title | A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics | en_US |
| dc.type | Article | en_US |