Long-Endurance Nanocrystal TiO2 Resistive Memory Using a TaON Buffer Layer
| dc.citation.epage | 1751 | en_US |
| dc.citation.spage | 1749 | en_US |
| dc.citation.volume | 32 | en_US |
| dc.citation.woscount | 20 | en_US |
| dc.contributor.author | Cheng, C. H. | en_US |
| dc.contributor.author | Chen, P. C. | en_US |
| dc.contributor.author | Wu, Y. H. | en_US |
| dc.contributor.author | Yeh, F. S. | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2019-04-02T05:57:57Z | |
| dc.date.available | 2019-04-02T05:57:57Z | |
| dc.date.issued | 2011-12-01 | en_US |
| dc.description.abstract | Using nanocrystal (nc) TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 10(10) cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory. | en_US |
| dc.identifier.doi | 10.1109/LED.2011.2168939 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2011.2168939 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/150416 | |
| dc.identifier.wosnumber | WOS:000297352500034 | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | GeO2 | en_US |
| dc.subject | hopping conduction | en_US |
| dc.subject | resistive random access memory (RRAM) | en_US |
| dc.subject | TiO2 | en_US |
| dc.title | Long-Endurance Nanocrystal TiO2 Resistive Memory Using a TaON Buffer Layer | en_US |
| dc.type | Article | en_US |
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