深次微米T型閘極金氧半電晶體之研製
| dc.contributor.author | 黃調元 | en_US |
| dc.contributor.author | TIAO-YUANHUANG | en_US |
| dc.contributor.department | 交通大學電子工程系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:36:52Z | |
| dc.date.available | 2014-12-13T10:36:52Z | |
| dc.date.issued | 1999 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC88-2215-E009-030 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=418076&docId=74161 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/94236 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 金氧半場效電晶體 | zh_TW |
| dc.subject | 窄線寬效應 | zh_TW |
| dc.subject | 橋接效應 | zh_TW |
| dc.subject | 深次微米 | zh_TW |
| dc.subject | MOSFET | en_US |
| dc.subject | Narrow line-width effect | en_US |
| dc.subject | Bridging effect | en_US |
| dc.subject | Deep submicrometer | en_US |
| dc.title | 深次微米T型閘極金氧半電晶體之研製 | zh_TW |
| dc.title | Development and Characterization of a Novel Method for Fabricating Deep-Micron Si MOSFET's with T-shaped Gate | en_US |
| dc.type | Plan | en_US |