Electrically injected 1.3-mu m quantum-dot photonic-crystal surface-emitting lasers
| dc.citation.epage | 32704 | en_US |
| dc.citation.issue | 26 | en_US |
| dc.citation.spage | 32697 | en_US |
| dc.citation.volume | 25 | en_US |
| dc.citation.woscount | 5 | en_US |
| dc.contributor.author | Hsu, Ming-Yang | en_US |
| dc.contributor.author | Lin, Gray | en_US |
| dc.contributor.author | Pan, Chien-Hung | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2019-04-03T06:41:32Z | |
| dc.date.available | 2019-04-03T06:41:32Z | |
| dc.date.issued | 2017-12-25 | en_US |
| dc.description.abstract | We have fabricated electrically injected InAs/InGaAs/GaAs quantum-dot (QD) photonic-crystal (PC) surface-emitting lasers (SELs) and successfully demonstrated roomtemperature lasing emissions at 1.3-mu m wavelength for the first time. The PCSEL device fabrication was greatly simplified by deposition of transparent conducting layer of indiumtin- oxide over "PC slab-on-substrate" structure. The threshold current density per QD layer was as low as 50 A/cm(2)/layer; however, the optical output was limited to 2 mW. The bandedge lasing mode was identified and near-circular beam with narrow divergence angle less than 2 degrees was achieved. (C) 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement | en_US |
| dc.identifier.doi | 10.1364/OE.25.032697 | en_US |
| dc.identifier.issn | 1094-4087 | en_US |
| dc.identifier.journal | OPTICS EXPRESS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1364/OE.25.032697 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/144306 | |
| dc.identifier.wosnumber | WOS:000418893200045 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Electrically injected 1.3-mu m quantum-dot photonic-crystal surface-emitting lasers | en_US |
| dc.type | Article | en_US |