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Electrical Performance and Reliability Investigation of Cosputtered Cu/Ti Bonded Interconnects

dc.citation.epage3526en_US
dc.citation.issue10en_US
dc.citation.spage3521en_US
dc.citation.volume60en_US
dc.citation.woscount0
dc.contributor.authorChen, Hsiao-Yuen_US
dc.contributor.authorHsu, Sheng-Yaoen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:32:19Z
dc.date.available2014-12-08T15:32:19Z
dc.date.issued2013-10-01en_US
dc.description.abstractElectrical evaluation along with the material analysis and reliability investigation of cosputtered Cu/Ti bonded interconnect in 3-D integration is presented in this paper. Diffusion behavior of cosputtered metals under different bonding ambient is evaluated as well. This paper shows that the bonded structure exhibits several interesting features under atmospheric bonding ambient, including self-formed adhesion layer, Cu-Cu bonding, and Ti oxide sidewall passivation. Electrical and reliability investigations of cosputtered Cu/Ti bonded interconnects show an excellent electrical performance and a high stability under a large variety of reliability tests, indicating the potential of using cosputtered Cu/Ti bonded interconnects for 3-D integration applications.en_US
dc.identifier.doi10.1109/TED.2013.2278396en_US
dc.identifier.issn0018-9383en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2013.2278396en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/22702
dc.identifier.wosnumberWOS:000324928900077
dc.language.isoen_USen_US
dc.subject3-D integrationen_US
dc.subjectbonding technologyen_US
dc.subjectcosputtereden_US
dc.titleElectrical Performance and Reliability Investigation of Cosputtered Cu/Ti Bonded Interconnectsen_US
dc.typeArticleen_US

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