HYDROGENATED AMORPHOUS SILICON-CARBIDE THIN-FILM LIGHT-EMITTING DIODE WITH QUANTUM-WELL-INJECTION STRUCTURE
| dc.citation.epage | 708 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 707 | en_US |
| dc.citation.volume | 29 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | JEN, TS | en_US |
| dc.contributor.author | CHEN, JY | en_US |
| dc.contributor.author | SHIN, NF | en_US |
| dc.contributor.author | HONG, JW | en_US |
| dc.contributor.author | CHANG, CY | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:04:33Z | |
| dc.date.available | 2014-12-08T15:04:33Z | |
| dc.date.issued | 1993-04-15 | en_US |
| dc.description.abstract | To improve the electroluminescence (EL) intensity of the hydrogenated amorphous silicon carbide (a-SiC:H) pin thin-film light-emitting diode (TFLED), a quantum-well-injection (QWI) structure has been incorporated into the i-layer of an a-SiC:H pin TFLED at the p-i interface. The obtained brightness of this QWI TFLED is 256 cd/m2 at an injection current density of 800 mA/cm2, which is about three orders of magnitude higher than the brightness of an a-SiC:H pin TFLED. Also, a comparatively lower EL threshold voltage of 6 V was observed for this a-SiC:H QWI TFLED. | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3046 | |
| dc.identifier.wosnumber | WOS:A1993LB77100042 | |
| dc.language.iso | en_US | en_US |
| dc.subject | LIGHT-EMITTING DIODES | en_US |
| dc.subject | THIN-FILM DEVICES | en_US |
| dc.title | HYDROGENATED AMORPHOUS SILICON-CARBIDE THIN-FILM LIGHT-EMITTING DIODE WITH QUANTUM-WELL-INJECTION STRUCTURE | en_US |
| dc.type | Article | en_US |