Impact of Quantum Confinement on Short-Channel Effects for Ultrathin-Body Germanium-on-Insulator MOSFETs

Abstract

This letter investigates the impact of quantum confinement (QC) on the short-channel effect (SCE) of ultrathin-body (UTB) and thin-buried-oxide germanium-on-insulator (GeOI) MOSFETs using an analytical solution of Schrodinger equation verified with TCAD simulation. Our study indicates that, although the QC effect increases the threshold voltage (V(th)) roll-off when the channel thickness (T(ch)) is larger than a critical value (T(ch,crit)), it may decrease the V(th) roll-off of GeOI MOSFETs when the T(ch) is smaller than T(ch,crit). Since Ge and Si channels exhibit different degrees of confinement and T(ch,crit), the impact of QC must be considered when one-to-one comparisons between UTB GeOI and Si-on-insulator MOSFETs regarding the SCE are made.