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A classification-based fault detection and isolation scheme for the ion implanter

dc.citation.epage424en_US
dc.citation.issue4en_US
dc.citation.spage411en_US
dc.citation.volume19en_US
dc.citation.woscount5
dc.contributor.authorLin, Shin-Yeuen_US
dc.contributor.authorHorng, Shih-Chengen_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.date.accessioned2014-12-08T15:15:31Z
dc.date.available2014-12-08T15:15:31Z
dc.date.issued2006-11-01en_US
dc.description.abstractWe propose a classification-based fault detection and isolation scheme for the ion implanter. The proposed scheme consists of two parts: 1) the classification part and 2) the fault detection and isolation part. In the classification part, we propose a hybrid classification tree (HCT) with learning capability to classify the recipe of a working wafer in the ion implanter, and a k-fold cross-validation error is treated as the accuracy of the classification result. In the fault detection and isolation part, we propose a warning signal generation criteria based on the classification accuracy to detect and fault isolation scheme based on the HCT to isolate the actual fault of an ion implanter. We have compared the proposed classifier with the existing classification software and tested the validity of the proposed fault detection and isolation scheme for real cases to obtain successful results.en_US
dc.identifier.doi10.1109/TSM.2006.883594en_US
dc.identifier.issn0894-6507en_US
dc.identifier.journalIEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURINGen_US
dc.identifier.urihttp://dx.doi.org/10.1109/TSM.2006.883594en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/11613
dc.identifier.wosnumberWOS:000242065000007
dc.language.isoen_USen_US
dc.subjectclassificationen_US
dc.subjectclassification and regression tree (CART)en_US
dc.subjectclustering algorithmen_US
dc.subjectfault detection and isolationen_US
dc.subjection implanteren_US
dc.titleA classification-based fault detection and isolation scheme for the ion implanteren_US
dc.typeArticleen_US

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