DIFLUOROSILYLENE AS A PRECURSOR FOR THE CHEMICAL VAPOR-DEPOSITION OF TITANIUM SILICIDE
| dc.citation.epage | 984 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 983 | en_US |
| dc.citation.volume | 2 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | CHEN, CC | en_US |
| dc.contributor.author | YU, JL | en_US |
| dc.contributor.author | LEE, CY | en_US |
| dc.contributor.author | LIU, CS | en_US |
| dc.contributor.author | CHIU, HT | en_US |
| dc.contributor.department | 應用化學系 | zh_TW |
| dc.contributor.department | Department of Applied Chemistry | en_US |
| dc.date.accessioned | 2014-12-08T15:04:48Z | |
| dc.date.available | 2014-12-08T15:04:48Z | |
| dc.date.issued | 1992-09-01 | en_US |
| dc.description.abstract | A new method for preparing thin films of titanium silicide, TiSi2, by chemical vapour deposition of difluorosilylene and titanium tetrachloride is reported. | en_US |
| dc.identifier.issn | 0959-9428 | en_US |
| dc.identifier.journal | JOURNAL OF MATERIALS CHEMISTRY | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3309 | |
| dc.identifier.wosnumber | WOS:A1992JN40600015 | |
| dc.language.iso | en_US | en_US |
| dc.subject | CHEMICAL VAPOR DEPOSITION | en_US |
| dc.subject | TITANIUM SILICIDE | en_US |
| dc.subject | THIN FILM | en_US |
| dc.title | DIFLUOROSILYLENE AS A PRECURSOR FOR THE CHEMICAL VAPOR-DEPOSITION OF TITANIUM SILICIDE | en_US |
| dc.type | Note | en_US |