Reduction of leakage current in chemical-vapor-deposited Ta2O5 thin films by furnace N2O annealing

dc.citation.epage	1029	en_US
dc.citation.spage	1027	en_US
dc.citation.volume	44	en_US
dc.citation.woscount	31	en_US
dc.contributor.author	Sun, SC	en_US
dc.contributor.author	Chen, TF	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	奈米中心	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	Nano Facility Center	en_US
dc.date.accessioned	2019-04-02T06:00:03Z
dc.date.available	2019-04-02T06:00:03Z
dc.date.issued	1997-06-01	en_US
dc.description.abstract	In this brief, we present a post-deposition annealing technique that employs furnace annealing in N2O (FN2O) to reduce the leakage current of chemical-vapor-deposited tantalum penta-oxide (CVD Ta2O5) thin films, Compared with furnace annealing in O-2 (FO) and rapid thermal annealing in N2O (RTN2O), FN2O annealing proved to have the lowest leakage current and the most reliable time-dependent dielectric breakdown (TDDB).	en_US
dc.identifier.doi	10.1109/16.585562	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/16.585562	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/149519
dc.identifier.wosnumber	WOS:A1997WY93700017	en_US
dc.language.iso	en_US	en_US
dc.title	Reduction of leakage current in chemical-vapor-deposited Ta2O5 thin films by furnace N2O annealing	en_US
dc.type	Article	en_US

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