Room temperature negative differential capacitance in self-assembled quantum dots
| dc.citation.epage | en_US | |
| dc.citation.issue | 23 | en_US |
| dc.citation.volume | 41 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Ilchenko, V. V. | en_US |
| dc.contributor.author | Marin, V. V. | en_US |
| dc.contributor.author | Lin, S. D. | en_US |
| dc.contributor.author | Panarin, K. Y. | en_US |
| dc.contributor.author | Buyanin, A. A. | en_US |
| dc.contributor.author | Tretyak, O. V. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:10:32Z | |
| dc.date.available | 2014-12-08T15:10:32Z | |
| dc.date.issued | 2008-12-07 | en_US |
| dc.description.abstract | The negative differential capacitance (NDC) of Schottky diodes with layers of InAs quantum dots (QDs) has been clearly observed at room temperature. The frequency dependence of the NDC is investigated. The measured peak capacitances of NDC decay rapidly at the testing frequencies higher than a few kilohertz. A kinetic model considering the testing signal is proposed and the capture rates of QDs are extracted. The simulation result is quantitatively consistent with the experimental data when the charging effect in QDs is included. | en_US |
| dc.identifier.doi | 10.1088/0022-3727/41/23/235107 | en_US |
| dc.identifier.issn | 0022-3727 | en_US |
| dc.identifier.journal | JOURNAL OF PHYSICS D-APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1088/0022-3727/41/23/235107 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/8044 | |
| dc.identifier.wosnumber | WOS:000261052500038 | |
| dc.language.iso | en_US | en_US |
| dc.title | Room temperature negative differential capacitance in self-assembled quantum dots | en_US |
| dc.type | Article | en_US |