High Performance and Reliability of Poly-Si Thin-Film Transistors Using Nickel Drive-In Induced Laterally Crystallization
| dc.citation.epage | 195 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 193 | en_US |
| dc.citation.volume | 33 | en_US |
| dc.contributor.author | Wu, YewChung Sermon | en_US |
| dc.contributor.author | Chang, Chih-Pang | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:29:43Z | |
| dc.date.available | 2014-12-08T15:29:43Z | |
| dc.date.issued | 2010 | en_US |
| dc.description.abstract | In this study, polycrystalline silicon thin film transistors using drive-in Ni induced lateral crystallization (DILC) was proposed. In DILC, F+ implantation was used to drive Ni in the alpha-Si layer. To reduce the Ni contamination, the remained Ni film was then removed, and subsequently annealed at 590 degrees C. It was found DILC TFTs exhibit high field-effect mobility, low threshold voltage, low subthreshold slope, high on-state current, lower trap state density, smaller standard deviations, and low off-state leakage current compared with conventional Ni-metal-induced lateral crystallization (MILC) TFTs. | en_US |
| dc.identifier.doi | 10.1149/1.3481236 | en_US |
| dc.identifier.isbn | 978-1-60768-174-8 | en_US |
| dc.identifier.issn | 1938-5862 | en_US |
| dc.identifier.journal | THIN FILM TRANSISTORS 10 (TFT 10) | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.3481236 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/21336 | |
| dc.identifier.wosnumber | WOS:000315444100023 | |
| dc.language.iso | en_US | en_US |
| dc.title | High Performance and Reliability of Poly-Si Thin-Film Transistors Using Nickel Drive-In Induced Laterally Crystallization | en_US |
| dc.type | Proceedings Paper | en_US |