Improving electrical characteristics of high-k NiTiO dielectric with nitrogen ion implantation.
| dc.citation.epage | 6904 | en_US |
| dc.citation.issue | 9A | en_US |
| dc.citation.spage | 6902 | en_US |
| dc.citation.volume | 45 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Yang, Wen-Luh | en_US |
| dc.contributor.author | Chao, Tien-Sheng | en_US |
| dc.contributor.author | Chen, Shine-China | en_US |
| dc.contributor.author | Yang, Chin-Hao | en_US |
| dc.contributor.author | Peng, Wu-Chin | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:15:57Z | |
| dc.date.available | 2014-12-08T15:15:57Z | |
| dc.date.issued | 2006-09-01 | en_US |
| dc.description.abstract | A new high-dielectric-constant (k) NiTiO dielectric film with a low temperature has been investigated for the first time. The k of the NiTiO film was estimated to be larger than 40. The roughness of the NiTiO dielectric film to nitrogen ion implantation (I/I) was uniform, thus causing a low leakage current (< 10(-9) A) and a high breakdown voltage (> 25 MV/cm(2)). These results are superior to those reported in the literature, suggesting a potential use of the NiTiO film as dielectric for future RF/mixed IC applications. | en_US |
| dc.identifier.doi | 10.1143/JJAP.45.6902 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.45.6902 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/11884 | |
| dc.identifier.wosnumber | WOS:000240806800024 | |
| dc.language.iso | en_US | en_US |
| dc.subject | high-k | en_US |
| dc.subject | NiTiO | en_US |
| dc.subject | MIM | en_US |
| dc.title | Improving electrical characteristics of high-k NiTiO dielectric with nitrogen ion implantation. | en_US |
| dc.type | Article | en_US |