New Host Containing Bipolar Carrier Transport Moiety for High-Efficiency Electrophosphorescence at Low Voltages
| dc.citation.epage | + | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 688 | en_US |
| dc.citation.volume | 21 | en_US |
| dc.citation.woscount | 90 | |
| dc.contributor.author | Gao, Zhi Qiang | en_US |
| dc.contributor.author | Luo, Meiming | en_US |
| dc.contributor.author | Sun, Xiao Hua | en_US |
| dc.contributor.author | Tam, Hoi Lam | en_US |
| dc.contributor.author | Wong, Man Shing | en_US |
| dc.contributor.author | Mi, Bao Xiu | en_US |
| dc.contributor.author | Xia, Ping Fang | en_US |
| dc.contributor.author | Cheah, Kok Wai | en_US |
| dc.contributor.author | Chen, Chin Hsin | en_US |
| dc.contributor.department | 友訊交大聯合研發中心 | zh_TW |
| dc.contributor.department | D Link NCTU Joint Res Ctr | en_US |
| dc.date.accessioned | 2014-12-08T15:10:01Z | |
| dc.date.available | 2014-12-08T15:10:01Z | |
| dc.date.issued | 2009-02-09 | en_US |
| dc.description.abstract | A new host material for use in phosphorescent OLEDs with desirable electronic properties has been synthesized. The material exhibits superior carrier-transport properties, a narrow optical band gap, relatively high triplet energy, and high thermal stability. It is synthesized by integrating hole-transporting carbazole groups into an electron-transporting phenanthroline core (see figure), and is demonstrated to be an excellent host for phosphorescent dopant emitters. | en_US |
| dc.identifier.doi | 10.1002/adma.200702877 | en_US |
| dc.identifier.issn | 0935-9648 | en_US |
| dc.identifier.journal | ADVANCED MATERIALS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1002/adma.200702877 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/7642 | |
| dc.identifier.wosnumber | WOS:000263492000011 | |
| dc.language.iso | en_US | en_US |
| dc.title | New Host Containing Bipolar Carrier Transport Moiety for High-Efficiency Electrophosphorescence at Low Voltages | en_US |
| dc.type | Article | en_US |