Electrical characteristics of Ni Ohmic contact on n-type GeSn
| dc.citation.epage | en_US | |
| dc.citation.issue | 24 | en_US |
| dc.citation.volume | 104 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Li, H. | en_US |
| dc.contributor.author | Cheng, H. H. | en_US |
| dc.contributor.author | Lee, L. C. | en_US |
| dc.contributor.author | Lee, C. P. | en_US |
| dc.contributor.author | Su, L. H. | en_US |
| dc.contributor.author | Suen, Y. W. | en_US |
| dc.contributor.department | 奈米科技中心 | zh_TW |
| dc.contributor.department | Center for Nanoscience and Technology | en_US |
| dc.date.accessioned | 2014-12-08T15:36:18Z | |
| dc.date.available | 2014-12-08T15:36:18Z | |
| dc.date.issued | 2014-06-16 | en_US |
| dc.description.abstract | We report an investigation of the electrical and material characteristics of Ni on an n-type GeSn film under thermal annealing. The current-voltage traces measured with the transmission line method are linear for a wide range of annealing temperatures. The specific contact resistivity was found to decrease with increasing annealing temperature, followed by an increase as the annealing temperature further increased, with a minimum value at an annealing temperature of 350 degrees C. The material characteristics at the interface layer were measured by energy-dispersive spectrometer, showing that an atomic ratio of (Ni)/(GeSn) = 1:1 yields the lowest specific contact resistivity. (C) 2014 AIP Publishing LLC. | en_US |
| dc.identifier.doi | 10.1063/1.4883748 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.4883748 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/24642 | |
| dc.identifier.wosnumber | WOS:000337915000023 | |
| dc.language.iso | en_US | en_US |
| dc.title | Electrical characteristics of Ni Ohmic contact on n-type GeSn | en_US |
| dc.type | Article | en_US |