Improvement of junction leakage of nickel silicided junction by a Ti-capping layer
| dc.citation.epage | 573 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | 572 | en_US |
| dc.citation.volume | 20 | en_US |
| dc.citation.woscount | 44 | |
| dc.contributor.author | Hou, TH | en_US |
| dc.contributor.author | Lei, TF | en_US |
| dc.contributor.author | Chao, TS | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:46:06Z | |
| dc.date.available | 2014-12-08T15:46:06Z | |
| dc.date.issued | 1999-11-01 | en_US |
| dc.description.abstract | A novel NiSi process with a thin Ti-cap layer is proposed, for the first time, to improve the leakage problem of Ni-silicided junction, The Ti-cap samples exhibit a very low leakage current density about 1 x 10 A/cm(2) after 600 degrees C annealing, which is one order of magnitude reduction comparing with uncapped samples. From Anger analyzes, it is found that this significant improvement results from suppression of the oxidation of the Ni-silicide during the thermal annealing process. | en_US |
| dc.identifier.doi | 10.1109/55.798047 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.798047 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/31000 | |
| dc.identifier.wosnumber | WOS:000083431700010 | |
| dc.language.iso | en_US | en_US |
| dc.subject | junction leakage | en_US |
| dc.subject | nickel silicide | en_US |
| dc.subject | titanium | en_US |
| dc.title | Improvement of junction leakage of nickel silicided junction by a Ti-capping layer | en_US |
| dc.type | Article | en_US |