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Spin-current generation and detection in the presence of an ac gate

dc.citation.epage0en_US
dc.citation.issue23en_US
dc.citation.spage0en_US
dc.citation.volume68en_US
dc.citation.woscount70en_US
dc.contributor.authorMal'shukov, AGen_US
dc.contributor.authorTang, CSen_US
dc.contributor.authorChu, CSen_US
dc.contributor.authorChao, KAen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.date.accessioned2019-04-03T06:38:38Z
dc.date.available2019-04-03T06:38:38Z
dc.date.issued2003-12-01en_US
dc.description.abstractWe predict that in a narrow gap III-V semiconductor quantum well or quantum wire, an observable electron spin current can be generated with a time-dependent gate to modify the Rashba spin-orbit coupling constant. Methods to rectify the so generated ac current are discussed. An all-electric method of spin-current detection is suggested, which measures the voltage on the gate in the vicinity of a two-dimensional electron gas carrying a time-dependent spin current. Both the generation and detection do not involve any optical or magnetic mediator.en_US
dc.identifier.doi10.1103/PhysRevB.68.233307en_US
dc.identifier.issn2469-9950en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.68.233307en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/27338
dc.identifier.wosnumberWOS:000188186400019en_US
dc.language.isoen_USen_US
dc.titleSpin-current generation and detection in the presence of an ac gateen_US
dc.typeArticleen_US

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