High-power efficient tunable Nd : GdVO4 laser at 1083 nm

dc.citation.epage	2109	en_US
dc.citation.issue	16	en_US
dc.citation.spage	2107	en_US
dc.citation.volume	30	en_US
dc.citation.woscount	40
dc.contributor.author	Chen, YF	en_US
dc.contributor.author	Ku, ML	en_US
dc.contributor.author	Su, KW	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.date.accessioned	2014-12-08T15:18:37Z
dc.date.available	2014-12-08T15:18:37Z
dc.date.issued	2005-08-15	en_US
dc.description.abstract	An efficient tunable diode-pumped Nd:GdVO4 laser at 1083 nm has been constructed by suppressing the higher gain transition near 1063 nm. With 12.5 W diode pump power, the free-running output power centered about 1083 nm was up to 3.4 W, corresponding to an optical-to-optical conversion efficiency of 30.1%. When a simple uncoated etalon was used as a wavelength-selective element, the output power at each helium transition was higher than 2.5 W. (c) 2005 Optical Society of America.	en_US
dc.identifier.doi	10.1364/OL.30.002107	en_US
dc.identifier.issn	0146-9592	en_US
dc.identifier.journal	OPTICS LETTERS	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/OL.30.002107	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/13398
dc.identifier.wosnumber	WOS:000231072700019
dc.language.iso	en_US	en_US
dc.title	High-power efficient tunable Nd : GdVO4 laser at 1083 nm	en_US
dc.type	Article	en_US

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