A MODEL FOR BORON DEPOSITION IN SILICON USING A BBR3 SOURCE
| dc.citation.epage | 1596 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 1592 | en_US |
| dc.citation.volume | 129 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | GUO, SF | en_US |
| dc.contributor.author | CHEN, WS | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:06:23Z | |
| dc.date.available | 2014-12-08T15:06:23Z | |
| dc.date.issued | 1982 | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4956 | |
| dc.identifier.wosnumber | WOS:A1982NW36700039 | |
| dc.language.iso | en_US | en_US |
| dc.title | A MODEL FOR BORON DEPOSITION IN SILICON USING A BBR3 SOURCE | en_US |
| dc.type | Article | en_US |