High work function IrxSi gates on HfAlON p-MOSFETs
| dc.citation.epage | 92 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 90 | en_US |
| dc.citation.volume | 27 | en_US |
| dc.citation.woscount | 17 | |
| dc.contributor.author | Wu, CH | en_US |
| dc.contributor.author | Yu, DS | en_US |
| dc.contributor.author | Chin, A | en_US |
| dc.contributor.author | Wang, SJ | en_US |
| dc.contributor.author | Li, MF | en_US |
| dc.contributor.author | Zhu, C | en_US |
| dc.contributor.author | Hung, BE | en_US |
| dc.contributor.author | McAlister, SP | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:17:29Z | |
| dc.date.available | 2014-12-08T15:17:29Z | |
| dc.date.issued | 2006-02-01 | en_US |
| dc.description.abstract | We have fabricated the fully silicided IrxSi-gated p-MOSFETs on HfAlON gate dielectric with 1.7-mn equivalent oxide thickness. After 950 degrees C rapid thermal annealing, the fully IrxSi/HfAlON device has high effective work function of 4.9 eV, high peak hole mobility of 80 cm(2)/V.s, and the advantage of being process compatible to the current VLSI fabrication line. | en_US |
| dc.identifier.doi | 10.1109/LED.2005.862687 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2005.862687 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/12669 | |
| dc.identifier.wosnumber | WOS:000234850400004 | |
| dc.language.iso | en_US | en_US |
| dc.subject | HfAlON | en_US |
| dc.subject | IrSi | en_US |
| dc.subject | MOSFET | en_US |
| dc.title | High work function IrxSi gates on HfAlON p-MOSFETs | en_US |
| dc.type | Article | en_US |