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A SIMPLE PUNCHTHROUGH VOLTAGE MODEL FOR SHORT-CHANNEL MOSFETS WITH SINGLE CHANNEL IMPLANTATION IN VLSI

dc.citation.epage1707en_US
dc.citation.issue9en_US
dc.citation.spage1704en_US
dc.citation.volume32en_US
dc.citation.woscount4
dc.contributor.authorWU, CYen_US
dc.contributor.authorHSIAO, WZen_US
dc.contributor.authorCHEN, HHen_US
dc.contributor.department工學院zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentCollege of Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:06:15Z
dc.date.available2014-12-08T15:06:15Z
dc.date.issued1985en_US
dc.identifier.issn0018-9383en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4825
dc.identifier.wosnumberWOS:A1985ARZ8600012
dc.language.isoen_USen_US
dc.titleA SIMPLE PUNCHTHROUGH VOLTAGE MODEL FOR SHORT-CHANNEL MOSFETS WITH SINGLE CHANNEL IMPLANTATION IN VLSIen_US
dc.typeArticleen_US

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