Enhancement of light output power of InGaN/GaN multiple quantum well light-emitting diodes by titanium dioxide texturing
| dc.citation.epage | 5440 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 5438 | en_US |
| dc.citation.volume | 47 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Huang, Kuo-Chin | en_US |
| dc.contributor.author | Lan, Wen-How | en_US |
| dc.contributor.author | Huang, Kai Feng | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:11:14Z | |
| dc.date.available | 2014-12-08T15:11:14Z | |
| dc.date.issued | 2008-07-01 | en_US |
| dc.description.abstract | The enhancement of external quantum efficiency in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with a titanium dioxide (TiO(2)) textured film has been observed. The output power values of conventional and TiO(2) textured LEDs Lit an injection Current of 20 mA are 6.25 and 8 mW, respectively. The external quantum efficiencies of the conventional and TiO(2) textured LEDs at an injection Current of 20 mA are 11.5 and 14.8%, respectively. The external quantum efficiency of the TiO(2) textured LEDs Lit an injection current of 20 mA is 28% higher than that of the conventional LEDs. A higher-output-power InGaN/GaN MQW LED has been obtained by coating with a TiO(2) textured film. | en_US |
| dc.identifier.doi | 10.1143/JJAP.47.5438 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.47.5438 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/8615 | |
| dc.identifier.wosnumber | WOS:000259550600033 | |
| dc.language.iso | en_US | en_US |
| dc.subject | titanium dioxide (TiO2) | en_US |
| dc.subject | textured | en_US |
| dc.subject | output power | en_US |
| dc.subject | external quantum efficiency | en_US |
| dc.title | Enhancement of light output power of InGaN/GaN multiple quantum well light-emitting diodes by titanium dioxide texturing | en_US |
| dc.type | Article | en_US |