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Single-longitudinal-mode semiconductor laser with digital and mode-hop-free fine-tuning mechanisms

dc.citation.epage6439en_US
dc.citation.issue26en_US
dc.citation.spage6434en_US
dc.citation.volume12en_US
dc.citation.woscount4
dc.contributor.authorShih, TSen_US
dc.contributor.authorLan, YPen_US
dc.contributor.authorLin, YFen_US
dc.contributor.authorPan, RPen_US
dc.contributor.authorPan, CLen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:37:09Z
dc.date.available2014-12-08T15:37:09Z
dc.date.issued2004-12-27en_US
dc.description.abstractWe report a novel external cavity laser diode (lambda = 1.5 mum). An intra-cavity liquid crystal pixel mirror allows digitally tuning of the laser wavelength to more than 40 wavelength channels of 100 GHz spacing according to the International Telecommunication Union (ITU) grid. Laser wavelength can further be fine-tuned by varying the driving voltages applied to an intra-cavity planar nematic liquid crystal phase plate. With a cell 52.3 mum in thickness, the output frequency can be continuously tuned over 1.89 GHz. The root-mean-square voltage required for driving the phase plate was from 1.00 to 4.56 volts. (C) 2004 Optical Society of America.en_US
dc.identifier.doi10.1364/OPEX.12.006434en_US
dc.identifier.issn1094-4087en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.identifier.urihttp://dx.doi.org/10.1364/OPEX.12.006434en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/25536
dc.identifier.wosnumberWOS:000226090600005
dc.language.isoen_USen_US
dc.titleSingle-longitudinal-mode semiconductor laser with digital and mode-hop-free fine-tuning mechanismsen_US
dc.typeArticleen_US

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