In-Plane Gate Transistors With a 40-mu m-Wide Channel Width
| dc.citation.epage | 1129 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.volume | 33 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Chung, Tung-Hsun | en_US |
| dc.contributor.author | Lin, Wei-Hsun | en_US |
| dc.contributor.author | Chao, Yi-Kai | en_US |
| dc.contributor.author | Chang, Shu-Wei | en_US |
| dc.contributor.author | Lin, Shih-Yen | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:23:48Z | |
| dc.date.available | 2014-12-08T15:23:48Z | |
| dc.date.issued | 2012-08-01 | en_US |
| dc.description.abstract | An in-plane gate transistor with a GaAs/AlGaAs 2-D electron-gas channel about 40 mu m in width is investigated. The saturation region and the drain current modulation at different gate bias voltages are observed despite the wide channel. The surface-induced channel depletion is suggested as the main mechanism for the turn-off of the drain current at -10 V gate bias. | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/16603 | |
| dc.identifier.wosnumber | WOS:000306923700011 | |
| dc.language.iso | en_US | en_US |
| dc.subject | In-plane gate transistors (IPGTs) | en_US |
| dc.subject | 2-D electron gas (2DEG) | en_US |
| dc.title | In-Plane Gate Transistors With a 40-mu m-Wide Channel Width | en_US |
| dc.type | Article | en_US |