A NEW CRITERION FOR TRANSIENT LATCHUP ANALYSIS IN BULK CMOS
| dc.citation.epage | 1347 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 1336 | en_US |
| dc.citation.volume | 36 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | YANG, YH | en_US |
| dc.contributor.author | WU, CY | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:05:48Z | |
| dc.date.available | 2014-12-08T15:05:48Z | |
| dc.date.issued | 1989-07-01 | en_US |
| dc.identifier.doi | 10.1109/16.30939 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/16.30939 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4338 | |
| dc.identifier.wosnumber | WOS:A1989U953200013 | |
| dc.language.iso | en_US | en_US |
| dc.title | A NEW CRITERION FOR TRANSIENT LATCHUP ANALYSIS IN BULK CMOS | en_US |
| dc.type | Article | en_US |