NOVEL FABRICATION TECHNIQUE TOWARDS QUANTUM DOTS
| dc.citation.epage | 3505 | en_US |
| dc.citation.issue | 25 | en_US |
| dc.citation.spage | 3503 | en_US |
| dc.citation.volume | 63 | en_US |
| dc.citation.woscount | 15 | |
| dc.contributor.author | LIU, DC | en_US |
| dc.contributor.author | LEE, CP | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:04:14Z | |
| dc.date.available | 2014-12-08T15:04:14Z | |
| dc.date.issued | 1993-12-20 | en_US |
| dc.description.abstract | A novel technique for semiconductor quantum dots fabrication is demonstrated. Using the technique of thermal etching or thermal evaporation during molecular beam epitaxial growth with a built-in evaporation mask, semiconductor quantum dots were obtained in a single growth run. | en_US |
| dc.identifier.doi | 10.1063/1.110133 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.110133 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2739 | |
| dc.identifier.wosnumber | WOS:A1993MM44800036 | |
| dc.language.iso | en_US | en_US |
| dc.title | NOVEL FABRICATION TECHNIQUE TOWARDS QUANTUM DOTS | en_US |
| dc.type | Article | en_US |
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