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Dynamic Switching Characteristics of 1 A Forward Current beta-Ga2O3 Rectifiers

dc.citation.epage61en_US
dc.citation.spage57en_US
dc.citation.volume7en_US
dc.citation.woscount0en_US
dc.contributor.authorYang, Jianchengen_US
dc.contributor.authorRen, Fanen_US
dc.contributor.authorChen, Yen-Tingen_US
dc.contributor.authorLiao, Yu-Teen_US
dc.contributor.authorChang, Chin-Weien_US
dc.contributor.authorLin, Jenshanen_US
dc.contributor.authorTadjer, Marko J.en_US
dc.contributor.authorPearton, S. J.en_US
dc.contributor.authorKuramata, Akitoen_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.date.accessioned2019-04-02T05:58:41Z
dc.date.available2019-04-02T05:58:41Z
dc.date.issued2019-01-01en_US
dc.description.abstractAn inductive load test circuit was used to measure the switching performance of field-plated edge-terminated Schottky rectifiers with a reverse breakdown voltage of 760 V (0.1 cm diameter, 7.85 x 10(-3) cm(2) area) and an absolute forward current of 1 A on 8 mu m thick epitaxial beta-Ga2O3 drift layers. The recovery characteristics for these vertical geometry beta-Ga2O3 Schottky rectifiers switching from forward current of 1 A to reverse off-state voltage of -300 V showed a recovery time (trr) of 64 ns. There was no significant temperature dependence of trr up to 150 degrees C.en_US
dc.identifier.doi10.1109/JEDS.2018.2877495en_US
dc.identifier.issn2168-6734en_US
dc.identifier.journalIEEE JOURNAL OF THE ELECTRON DEVICES SOCIETYen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JEDS.2018.2877495en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/148988
dc.identifier.wosnumberWOS:000460753000011en_US
dc.language.isoen_USen_US
dc.subjectGallium oxideen_US
dc.subjectSchottky diodeen_US
dc.subjectrectifiersen_US
dc.titleDynamic Switching Characteristics of 1 A Forward Current beta-Ga2O3 Rectifiersen_US
dc.typeArticleen_US

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