A REAL-TIME C-V MEASUREMENT CIRCUIT FOR MOS CAPACITORS UNDER CURRENT STRESSING
| dc.citation.epage | 777 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 775 | en_US |
| dc.citation.volume | 40 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | LEE, CL | en_US |
| dc.contributor.author | LEI, TF | en_US |
| dc.contributor.author | HO, JH | en_US |
| dc.contributor.author | WANG, WT | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:05:11Z | |
| dc.date.available | 2014-12-08T15:05:11Z | |
| dc.date.issued | 1991-08-01 | en_US |
| dc.description.abstract | A dynamic large signal C-V measurement circuit is presented to measure real time C-V characteristics of a MOS structure under current stressing conditions. The real time information on the generation and filling of traps and surface states can thus be obtained. With this circuit it has been shown that, for an Al-gate MOS structure, charges on traps and interface surface states recover immediately after the stressing is removed. | en_US |
| dc.identifier.doi | 10.1109/19.85352 | en_US |
| dc.identifier.issn | 0018-9456 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/19.85352 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3723 | |
| dc.identifier.wosnumber | WOS:A1991GB24600021 | |
| dc.language.iso | en_US | en_US |
| dc.title | A REAL-TIME C-V MEASUREMENT CIRCUIT FOR MOS CAPACITORS UNDER CURRENT STRESSING | en_US |
| dc.type | Article | en_US |