InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-mu m lasers
| dc.citation.epage | 431 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 429 | en_US |
| dc.citation.volume | 84 | en_US |
| dc.citation.woscount | 7 | |
| dc.contributor.author | Li, A. | en_US |
| dc.contributor.author | Liu, S. C. | en_US |
| dc.contributor.author | Su, K. W. | en_US |
| dc.contributor.author | Liao, Y. L. | en_US |
| dc.contributor.author | Huang, S. C. | en_US |
| dc.contributor.author | Chen, Y. F. | en_US |
| dc.contributor.author | Huang, K. F. | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:15:49Z | |
| dc.date.available | 2014-12-08T15:15:49Z | |
| dc.date.issued | 2006-09-01 | en_US |
| dc.description.abstract | We demonstrate the first use of InGaAsP quantum wells as a saturable absorber in the Q-switching of a diode-pumped Nd-doped 1.3 mu m laser. The barrier layers of the InGaAsP quantum-well device are designed to be a strong absorber for the suppression of the transition channel at 1.06 mu m. With an incident pump power of 1.8 W, an average output power of 160 mW with a Q-switched pulse width of 19 ns at a pulse repetition rate of 38 kHz was obtained. | en_US |
| dc.identifier.doi | 10.1007/s00340-006-2247-5 | en_US |
| dc.identifier.issn | 0946-2171 | en_US |
| dc.identifier.journal | APPLIED PHYSICS B-LASERS AND OPTICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1007/s00340-006-2247-5 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/11803 | |
| dc.identifier.wosnumber | WOS:000239394200011 | |
| dc.language.iso | en_US | en_US |
| dc.title | InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-mu m lasers | en_US |
| dc.type | Article | en_US |