Near-infrared femtosecond laser crystallized poly-Si thin film transistors
| dc.citation.epage | 6987 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | 6982 | en_US |
| dc.citation.volume | 15 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | Wang, Yi-Chao | en_US |
| dc.contributor.author | Shieh, Jia-Min | en_US |
| dc.contributor.author | Zan, Hsiao-Wen | en_US |
| dc.contributor.author | Pan, Ci-Ling | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | 顯示科技研究所 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.contributor.department | Institute of Display | en_US |
| dc.date.accessioned | 2014-12-08T15:14:01Z | |
| dc.date.available | 2014-12-08T15:14:01Z | |
| dc.date.issued | 2007-05-28 | en_US |
| dc.description.abstract | Polycrystalline silicon (poly-Si) thin film transistors (TFTs) fabricated by near-infrared femtosecond laser annealing (FLA) are demonstrated. The FLA-annealed poly-Si channels exhibit low tail-state, deep-state, and midgap-state densities of grain traps. Characteristics such as field-effect mobility, threshold voltage, and subthreshold slope for FLA-annealed poly-TFTs are comparable to those of conventional approaches. A wide process window for annealing laser fluences was confirmed by examining the changes in electrical parameters for transistors with various channel dimensions. (C) 2006 Optical Society of America. | en_US |
| dc.identifier.doi | 10.1364/OE.15.006982 | en_US |
| dc.identifier.issn | 1094-4087 | en_US |
| dc.identifier.journal | OPTICS EXPRESS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1364/OE.15.006982 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/10784 | |
| dc.identifier.wosnumber | WOS:000247240300053 | |
| dc.language.iso | en_US | en_US |
| dc.title | Near-infrared femtosecond laser crystallized poly-Si thin film transistors | en_US |
| dc.type | Article | en_US |