The cooling effect on structural, electrical, and optical properties of epitaxial a-plane ZnO:Al on r-plane sapphire grown by pulsed laser deposition
| dc.citation.epage | en_US | |
| dc.citation.issue | 15 | en_US |
| dc.citation.volume | 101 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Peng, Chun-Yen | en_US |
| dc.contributor.author | Liu, Yuan-An | en_US |
| dc.contributor.author | Wang, Wei-Lin | en_US |
| dc.contributor.author | Tian, Jr-Sheng | en_US |
| dc.contributor.author | Chang, Li | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:28:13Z | |
| dc.date.available | 2014-12-08T15:28:13Z | |
| dc.date.issued | 2012-10-08 | en_US |
| dc.description.abstract | Here, the unambiguous effect of cooling rate on structural, electrical, and optical properties of a-plane ZnO:Al on r-plane sapphire grown by pulsed laser deposition at 700 degrees C is reported. A high cooling rate (similar to 100 degrees C/min) can result in stripe morphology along m-direction and significant deformation on the epitaxial films of a-plane ZnO:Al with deteriorated crystallinity and significantly lowered resistivity. Also, photoluminescence spectra exhibit high intensities of excess violet and green emissions with low intensity of near band edge luminescence. Comparison with pure a-plane ZnO films is also presented. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4759032] | en_US |
| dc.identifier.doi | 10.1063/1.4759032 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.4759032 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/20432 | |
| dc.identifier.wosnumber | WOS:000310304900036 | |
| dc.language.iso | en_US | en_US |
| dc.title | The cooling effect on structural, electrical, and optical properties of epitaxial a-plane ZnO:Al on r-plane sapphire grown by pulsed laser deposition | en_US |
| dc.type | Article | en_US |