Three-dimensional simulation studies on electrostatic predictions for carbon nanotube field effect transistors (vol 177, pg 683, 2007)
| dc.citation.epage | 794 | en_US |
| dc.citation.issue | 10 | en_US |
| dc.citation.spage | 794 | en_US |
| dc.citation.volume | 178 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Chen, P. -Y. | en_US |
| dc.contributor.author | Shao, Y. -L. | en_US |
| dc.contributor.author | Cheng, K. -W. | en_US |
| dc.contributor.author | Hsu, K. -H. | en_US |
| dc.contributor.author | Wu, J. -S. | en_US |
| dc.contributor.author | Yu, J. -P. | en_US |
| dc.contributor.department | 機械工程學系 | zh_TW |
| dc.contributor.department | Department of Mechanical Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:12:10Z | |
| dc.date.available | 2014-12-08T15:12:10Z | |
| dc.date.issued | 2008-05-15 | en_US |
| dc.identifier.doi | 10.1016/j.cpc.2008.01.008 | en_US |
| dc.identifier.issn | 0010-4655 | en_US |
| dc.identifier.journal | COMPUTER PHYSICS COMMUNICATIONS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.cpc.2008.01.008 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9332 | |
| dc.identifier.wosnumber | WOS:000256733300008 | |
| dc.language.iso | en_US | en_US |
| dc.title | Three-dimensional simulation studies on electrostatic predictions for carbon nanotube field effect transistors (vol 177, pg 683, 2007) | en_US |
| dc.type | Correction | en_US |