Low-frequency noise characteristics of hot carrier-stressed buried-channel pMOSFETs
| dc.citation.epage | 418 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 411 | en_US |
| dc.citation.volume | 42 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Jang, SL | en_US |
| dc.contributor.author | Chen, HK | en_US |
| dc.contributor.author | Chang, KM | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:49:17Z | |
| dc.date.available | 2014-12-08T15:49:17Z | |
| dc.date.issued | 1998-03-01 | en_US |
| dc.description.abstract | Prestress and poststress low-frequency noise characteristics of buried-channel LDD pMOS-FETs have been studied. The devices were stressed at low gate and high drain bias, and the poststress drain current increases due to the hot-electron induced channel shortening effect. The noise measurements were carried out between 10 Hz and 100 kHz, 1/f(1.2) and generation-recombination current noises have been found in the drain current noises. The poststress 1/f(1.2) drain current noise increases in both the linear and saturation regime. This behavior is attributed to the increase of interface states and oxide electron charges after stress. (C) 1998 Elsevier Science Ltd. All rights reserved. | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/32772 | |
| dc.identifier.wosnumber | WOS:000073203900018 | |
| dc.language.iso | en_US | en_US |
| dc.title | Low-frequency noise characteristics of hot carrier-stressed buried-channel pMOSFETs | en_US |
| dc.type | Article | en_US |