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Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Nanoporous Patterned Sapphire Substrate

dc.citation.epageR47en_US
dc.citation.issue9en_US
dc.citation.spageR45en_US
dc.citation.volume3en_US
dc.citation.woscount0
dc.contributor.authorChen, Chien-Chihen_US
dc.contributor.authorYap, Chun-Yanen_US
dc.contributor.authorHsu, Wen-Yangen_US
dc.contributor.authorKuo, Cheng-Taen_US
dc.contributor.authorTsai, Tzong-Liangen_US
dc.contributor.authorChu, Jui-Yien_US
dc.contributor.authorWu, YewChung Sermonen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.date.accessioned2014-12-08T15:36:45Z
dc.date.available2014-12-08T15:36:45Z
dc.date.issued2014en_US
dc.description.abstractThe crystal quality and light output power of GaN-based LEDs grown on nanoporous patterned sapphire substrate (NPSS) were investigated. NPSS was prepared using an anodized aluminum oxide (AAO) layer. It was found that the crystal quality of GaN-based LEDs grown on NPSS was better than that on micron-sized patterned sapphire substrate (MPSS) and conventional sapphire substrate. However, the light output power of GaN-based LEDs grown on NPSS was smaller than that on MPSS because the light extraction efficiency (LEE) of MPSS was much larger than that of NPSS. (C) 2014 The Electrochemical Society. All rights reserved.en_US
dc.identifier.doi10.1149/2.0021409sslen_US
dc.identifier.issn2162-8742en_US
dc.identifier.journalECS SOLID STATE LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1149/2.0021409sslen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/25113
dc.identifier.wosnumberWOS:000340443900011
dc.language.isoen_USen_US
dc.titleCrystal Quality and Light Output Power of GaN-Based LEDs Grown on Nanoporous Patterned Sapphire Substrateen_US
dc.typeArticleen_US

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