Reactive ion etching of compound semiconductors grown by MOCVD technique with BCl3/SF6/Ar mixtures
| dc.citation.epage | 198 | en_US |
| dc.citation.spage | 194 | en_US |
| dc.contributor.author | Chang, KM | en_US |
| dc.contributor.author | Tsai, JY | en_US |
| dc.contributor.author | Yeh, CB | en_US |
| dc.contributor.author | Yeh, TH | en_US |
| dc.contributor.author | Wang, SW | en_US |
| dc.contributor.author | Jou, MJ | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:27:43Z | |
| dc.date.available | 2014-12-08T15:27:43Z | |
| dc.date.issued | 1995 | en_US |
| dc.identifier.journal | ISIC-95 - 6TH INTERNATIONAL SYMPOSIUM ON IC TECHNOLOGY, SYSTEMS & APPLICATIONS, PROCEEDINGS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/19963 | |
| dc.identifier.wosnumber | WOS:A1995BE63H00041 | |
| dc.language.iso | en_US | en_US |
| dc.title | Reactive ion etching of compound semiconductors grown by MOCVD technique with BCl3/SF6/Ar mixtures | en_US |
| dc.type | Proceedings Paper | en_US |
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