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Formation of nano-crystalline Si quantum dots in ZnO thin-films using a ZnO/Si multilayer structure

dc.citation.epage465en_US
dc.citation.issueen_US
dc.citation.spage463en_US
dc.citation.volume68en_US
dc.citation.woscount1
dc.contributor.authorKuo, Kuang-Yangen_US
dc.contributor.authorHsu, Shu-Weien_US
dc.contributor.authorChuang, Wen-Lingen_US
dc.contributor.authorLee, Po-Tsungen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:22:04Z
dc.date.available2014-12-08T15:22:04Z
dc.date.issued2012-02-01en_US
dc.description.abstractIn this study, we propose to fabricate ZnO thin-films with nano-crystalline Si (nc-Si) quantum dots (QDs) embedded using a ZnO/Si multilayer structure by radio-frequency (RF) magnetron sputtering method. Our results show that a high Si sputtering power (P-Si) can assist the formation of self-aggregated Si nano-clusters during deposition, which is helpful for the crystallization of nc-Si QDs and ZnO matrix during annealing. Great crystallinity and highly uniform size of nc-Si QDs are obtained for P-Si of 110 W. We experimentally demonstrate the formation of nc-Si QDs embedded in crystalline ZnO thin-films, which has a great potential for various electro-optical device applications. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.matlet.2011.11.022en_US
dc.identifier.issn0167-577Xen_US
dc.identifier.journalMATERIALS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.matlet.2011.11.022en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/15661
dc.identifier.wosnumberWOS:000300480600133
dc.language.isoen_USen_US
dc.subjectSi quantum doten_US
dc.subjectZnOen_US
dc.subjectSputteringen_US
dc.subjectThin-filmsen_US
dc.titleFormation of nano-crystalline Si quantum dots in ZnO thin-films using a ZnO/Si multilayer structureen_US
dc.typeArticleen_US

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