An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor
| dc.citation.epage | 938 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 933 | en_US |
| dc.citation.volume | 13 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Hsu, Hsiao-Hsuan | en_US |
| dc.contributor.author | Chang, Chun-Yen | en_US |
| dc.contributor.author | Cheng, Chun-Hu | en_US |
| dc.contributor.author | Chiou, Shan-Haw | en_US |
| dc.contributor.author | Huang, Chiung-Hui | en_US |
| dc.contributor.author | Chiu, Yu-Chien | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:36:48Z | |
| dc.date.available | 2014-12-08T15:36:48Z | |
| dc.date.issued | 2014-09-01 | en_US |
| dc.description.abstract | This study involved developing a low-power and high-mobility metal-oxide thin-film transistor that incorporated a bilayer IGZO/IGZO:Ti semiconductor material. Compared with control metal-oxide TFTs, the bilayer IGZO TFT through thickness modulation of IGZO: Ti can reach the smallest subthreshold swing (85 mV/decade) and the highest field effect mobility (49 cm(2)/Vs) at a drive voltage of <3 V. This performance level improvement can be attributed to the gettering effect caused by the IGZO: Ti capping layer and its dual advantages, which enhance device mobility and improve gate swing. | en_US |
| dc.identifier.doi | 10.1109/TNANO.2014.2332395 | en_US |
| dc.identifier.issn | 1536-125X | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON NANOTECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/TNANO.2014.2332395 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/25197 | |
| dc.identifier.wosnumber | WOS:000342083000008 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Gettering | en_US |
| dc.subject | InGaZnO (IGZO) | en_US |
| dc.subject | thin-film transistor (TFT) | en_US |
| dc.subject | titanium oxide (TiOx) | en_US |
| dc.title | An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor | en_US |
| dc.type | Article | en_US |