High brightness GaN-based light-emitting diodes
| dc.citation.epage | 125 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 118 | en_US |
| dc.citation.volume | 3 | en_US |
| dc.citation.woscount | 27 | |
| dc.contributor.author | Lee, Ya-Ju | en_US |
| dc.contributor.author | Lu, Tien-Chang | en_US |
| dc.contributor.author | Kuo, Hao-Chung | en_US |
| dc.contributor.author | Wang, Shing-Chung | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:13:56Z | |
| dc.date.available | 2014-12-08T15:13:56Z | |
| dc.date.issued | 2007-06-01 | en_US |
| dc.description.abstract | This paper reviews our recent progress of GaN-based high brightness light-emitting diodes (LEDs). Firstly, by adopting chemical wet etching patterned sapphire substrates in GaN-based LEDs, not only could increase the extraction quantum efficiency, but also improve the internal quantum efficiency. Secondly, we present a high light-extraction 465-nm GaN-based vertical light-emitting diode structure with double diffuse surfaces. The external quantum efficiency was demonstrated to be about 40%. The high performance LED was achieved mainly due to the strong guided-light scattering efficiency while employing double diffuse surfaces. | en_US |
| dc.identifier.doi | 10.1109/JDT.2007.894380 | en_US |
| dc.identifier.issn | 1551-319X | en_US |
| dc.identifier.journal | JOURNAL OF DISPLAY TECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/JDT.2007.894380 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/10741 | |
| dc.identifier.wosnumber | WOS:000259064300005 | |
| dc.language.iso | en_US | en_US |
| dc.subject | extraction quantum efficiency | en_US |
| dc.subject | GaN | en_US |
| dc.subject | internal quantum efficiency | en_US |
| dc.subject | light-emitting diodes (LEDs) | en_US |
| dc.title | High brightness GaN-based light-emitting diodes | en_US |
| dc.type | Article | en_US |